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Stacked 3-D Fin-CMOS technologyXUSHENG WU; CHAN, Philip C. H; SHENGDONG ZHANG et al.IEEE electron device letters. 2005, Vol 26, Num 6, pp 416-418, issn 0741-3106, 3 p.Article

A three-dimensional stacked Fin-CMOS technology for high-density ULSI circuitsXUSHENG WU; CHAN, Philip C. H; SHENGDONG ZHANG et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 9, pp 1998-2003, issn 0018-9383, 6 p.Article

Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon filmXINNAN LIN; CHUGUANG FENG; SHENGDONG ZHANG et al.Solid-state electronics. 2004, Vol 48, Num 12, pp 2315-2319, issn 0038-1101, 5 p.Article

A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and heliumDAKE WU; RU HUANG; WEIHAI BU et al.Microelectronic engineering. 2008, Vol 85, Num 7, pp 1490-1494, issn 0167-9317, 5 p.Article

Quasi-SOI MOSFETs- : A promising bulk device candidate for extremely scaled eraYU TIAN; HAN XIAO; RU HUANG et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 7, pp 1784-1788, issn 0018-9383, 5 p.Article